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Journal > International Journal of Electrical and Computer Engineering (IJECE) > Three-Dimensional Devices Transport Simulation Lifetime and Relaxation Semiconductor

 

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International Journal of Electrical and Computer Engineering (IJECE)
Vol 5, No 2: April 2015
Three-Dimensional Devices Transport Simulation Lifetime and Relaxation Semiconductor
Fadila Souad, Nouar ( University Djilali Liabès of Sidi bel Abbès)
Seddik, Mansouri ( University Djilali Liabès of Sidi bel Abbès)
Mohamed, Amrani ( University Djilali Liabès of Sidi bel Abbès)
Pierre, Marie ( CIMAP UMR 6252CNRS-ENSICAEN-CEA-UCBN)
Ahmed, Massoum ( University Djilali Liabès of Sidi bel Abbès)
Article Info   ABSTRACT
Published date:
01 Apr 2015
 
Our work is to create a three-dimensional Simulator (3D) used for the study of the components to low geometry of design, and to determine in the volume structure  the  potential distributions and densities of free carriers in bias voltage given by solving the system of Poisson  and two  continuities equations. The initial version can simulate components of lifetime semiconductor.  In this study, we make a comparison between the lifetime and relaxation semiconductor in the conduction mode. In order to create a larger Simulator, well perform a calculation by varying am bipolar lifetime way to move from lifetime semiconductor to relaxation semiconductor. We consider the case corresponding at two different values of diffusion lifetime τ0 which is corresponding to a measured lifetime in current transport. The method of resolution consists to linearization of the equations transport by the finite differences method. The algorithm for solving linear and strongly coupled equations deduced from the physical model is the Newton-Raphson. However, in order to allow a better convergence and consequently an improvement of time computing 3D, a method combined, incorporating the Newton algorithm and the Gummel method was developed. PIN diodes are used for test of the simulation model
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