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Journal > Jurnal Spektra > KARAKTERISASI OPTIK DAN STRUKTUR KRISTAL LiTaO3 PADA SUBSTRAT SILIKON [Si(111)] TIPE-n/n+

 

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Jurnal Spektra
Vol 16, No 2 (2015): Spektra: Jurnal Fisika dan Aplikasinya
KARAKTERISASI OPTIK DAN STRUKTUR KRISTAL LiTaO3 PADA SUBSTRAT SILIKON [Si(111)] TIPE-n/n+
Sani, Yulia ( Institut Pertanian Bogor, Jalan Meranti Gedung Wing S no 3 Dramaga Bogor – 16680)
Ukhtiningsih, Ira ( Institut Pertanian Bogor, Jalan Meranti Gedung Wing S no 3 Dramaga Bogor – 16680)
Herawan, Bambang ( Institut Pertanian Bogor, Jalan Meranti Gedung Wing S no 3 Dramaga Bogor – 16680)
Maddu, Akhiruddin ( Institut Pertanian Bogor, Jalan Meranti Gedung Wing S no 3 Dramaga Bogor – 16680)
Irzaman, - ( 1Institut Pertanian Bogor, Jalan Meranti Gedung Wing S no 3 Dramaga Bogor – 16680)
Article Info   ABSTRACT
Published date:
30 Oct 2015
 
AbstrakTelah berhasil dibuat film LiTaO3 pada substrat silikon [Si(111)] tipe-n/n+ dengan variasi suhu annealing selama 8 jam pada suhu  600 oC, dan 625 oC. Metode yang digunakan yaitu Chemical Solution Deposition (CSD) dengan spin coating berkecepatan putar 3000 rpm selama 30 detik dalam kelarutan 1 M. Analisis energi band gap menggunakan metode Tauc Plot diperoleh hasil nilai  2.58 dan 2.57 eV. Hasil analisis XRD untuk film LiTaO3 pada suhu annealing 600 0C menunjukkan bahwa struktur kristalnya membentuk hexagonal dengan parameter kisi a=b=5.199Å dan c=13.890Å . Hasil uji optiknya dapat mengabsorbsi spektrum Inframerah dekat dengan transisi tidak langsung, dan termasuk material semikonduktor.Kata kunci : Energi gap, LiTaO3, sifat optik, silikon tipe n/n+, XRD AbstractLiTaO3 films had been successfully deposited on the substrate of n/n+-type Silicon [Si(111)] wich temperature variant for 8 hours at temperature of 600 oC, and 625 oC. The method can be used Chemical Solution Deposition (CSD) and spin coating with rotational speed 3000 rpm for 30 seconds and 1 M solubility. Analysis of the band gap energy using Tauc Plot method produce results of 2.58 eV and 2.57 eV. The result of XRD Crystal structure analysis showed that LiTaO3 film annealed at 600 oC show a hexagonal structure  with lattice parameters of a = b = 5.199Å and c = 13.890Å. The result of optical characterization has shown that LiTaO3 can absorb near infrared spectrum through indirect transition and indicates that LiTaO3 films is semiconductor  materials.Keywords: band gap energy, LiTaO3, optical property, n/n+-type Silicon [Si(111)], XRD.
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